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this is information on a product in full production. january 2013 doc id 023011 rev 4 1/13 13 STGW60H65DF 60 a, 650 v field stop trench gate igbt with very fast diode datasheet ? production data features high speed switching tight parameters distribution safe paralleling low thermal resistance 6 s short-circuit withstand time very fast soft recovery antiparallel diode lead free package applications photovoltaic inverters uninterruptible power supply welding power factor correction high switching frequency converters description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging STGW60H65DF gw60h65df to-247 tube www.st.com
electrical ratings STGW60H65DF 2/13 doc id 023011 rev 4 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 120 a i c continuous collector current at t c = 100 c 60 a i cp (1) 1. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 240 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 120 a i f continuous forward current at t c = 100 c 60 a i fp (1) pulsed forward current 240 a p tot total dissipation at t c = 25 c 360 w t sc short-circuit withstand time at v cc = 400 v, v ge = 15 v 6s t stg storage temperature range - 55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.35 c/w r thjc thermal resistance junction-case diode 1.38 c/w r thja thermal resistance junction-ambient 50 c/w
STGW60H65DF electrical characteristics doc id 023011 rev 4 3/13 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.9 v v ge = 15 v, i c = 60 a t j = 150 c 2.1 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 6.0 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 7150 345 125 - pf pf pf q g total gate charge v cc = 520 v, i c = 60 a, v ge = 15 v -206-nc q ge gate-emitter charge - 60 - nc q gc gate-collector charge - 70 - nc table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on tu r n - o n d e l ay t i m e current rise time turn-on current slope v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v - 67 46 1043 - ns ns a/s t d(on) t r (di/dt) on tu r n - o n d e l ay t i m e current rise time turn-on current slope v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v t j = 150 c - 64 49 990 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v - 41 165 34 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v t j = 150 c - 49 169 78 - ns ns ns
electrical characteristics STGW60H65DF 4/13 doc id 023011 rev 4 table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 23 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25 c and 125 c). 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v - 1.5 1.1 2.6 - mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v t j = 150 c - 2.7 1.5 4.2 - mj mj mj table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 60 a i f = 60 a, t j = 150 c - 1.6 2.6 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 60 a, v r = 400 v, di/dt = 1700 a/s - 62 930 30 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 60 a, v r = 400 v, di/dt = 1630 a/s t j = 150 c - 100 2800 58 - ns nc a
STGW60H65DF electrical characteristics doc id 023011 rev 4 5/13 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = -40 c) figure 3. output characteristics (t j = 25 c) figure 4. output characteristics (t j = 150 c) figure 5. transfer characteristics figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current am11847v1 0 20 40 60 80 100 120 140 160 180 200 220 01234 i c (a) v ce (v) 9v 11v 13v v ge = 15v v ge = 20v am11848v1 0 20 40 60 80 100 120 140 160 180 200 220 01234 i c (a) v ce (v) 9v 11v 13v v ge = 15v v ge = 20v am11849v1 0 20 40 60 80 100 120 140 160 180 200 220 01234 i c (a) v ce (v) 9v 11v 13v v ge = 15v v ge = 20v am11850v1 0 20 40 60 80 100 120 140 160 180 200 220 6 7 8 9 10 11 12 (v) i c (a) v ge t j = -40c t j = 25c t j = 150c v ce = 10v am11851v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 v ce (v) t j (oc) i c = 120a i c = 60a i c = 30a am11852v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 30 40 50 60 70 80 90 100 110 v ce (v) i c (a) t j = -40c t j = 25c t j = 150c v ge =15v
electrical characteristics STGW60H65DF 6/13 doc id 023011 rev 4 figure 8. normalized v ge(th) vs. junction temperature figure 9. gate charge vs. gate-emitter voltage figure 10. capacitance variations (f = 1 mhz, v ge = 0) figure 11. switching losses vs. collector current figure 12. switching losses vs. gate resistance figure 13. switching losses vs. temperature am11853v1 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 125 v ge(th) norm (v) t j (oc) i c = 1 ma am11854v1 0 2 4 6 8 10 12 14 16 0 50 100 150 200 v ge (v) qg (nc) am11855v1 10 100 1000 10000 0.1 1 10 c (pf) v ce (v) c res c oes c ies am12728v1 0 1000 2000 3 000 4000 5000 20 40 60 8 0100 e ( j) i c (a) v cc = 400v , v ge = 15v, r g = 10 e on e off t j = 25 c t j = 125 c --- am12729v1 1000 1500 2000 2500 3 000 3 500 4000 01020 3 040 e (j) r g () e on e off v cc = 400v , v ge = 15v, i c = 60a, t j = 125c am127 3 0v1 500 750 1000 1250 1500 1750 2000 2250 25 50 75 100 125 e (j) t j (c) e on e off v cc = 400v, v ge = 15 v, i c = 60 a, r g = 10
STGW60H65DF electrical characteristics doc id 023011 rev 4 7/13 figure 14. turn-off soa figure 15. short circuit time & current vs. v ge figure 16. diode forward current vs. forward voltage figure 17. diode forward current vs. junction temperature figure 18. reverse recovery current as a function of diode current slope figure 19. reverse recovery time as a function of diode current slope am11859v1 0.01 0.1 1 10 100 0.1 1 10 100 i c (a) v ce (v) v ge = 15 v, r g = 10 t c = 150 c am11860v1 50 150 250 350 2.5 5 7.5 10 12.5 15 17.5 20 9 101112131415 i sc (a) t sc (s) v ge (v) v cc = 400v, t c = 25c t sc i sc am127 3 1v1 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 10 15 20 25 3 0 3 54045505560 v f (v) i f (a) tj =- 40c tj = 25c tj = 150c am127 3 2v1 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 v f (v) t j (oc) if = 15 a if = 3 0 a if = 60 a am127 33 v1 10 15 20 25 3 0 3 5 250 750 1250 1750 i rm (a) di/dt (a/s) v cc = 400 v, v ge = 15 v, i c = 60 a t j = 25 c t j = 125 c --- am127 3 4v1 40 50 60 70 8 0 90 100 110 120 250 750 1250 1750 t rr (n s ) di/dt (a/s) v cc = 400 v, v ge = 15 v, i c = 60 a t j = 25c t j = 125c ---
electrical characteristics STGW60H65DF 8/13 doc id 023011 rev 4 figure 20. reverse recovery charge as a function of diode current slope figure 21. maximum normalized z th junction to case (igbt) figure 22. maximum normalized z th junction to case (diode) am127 3 5v1 0.2 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 2 250 750 1250 1750 q rr ( c) di/dt (a/s) v cc = 400 v, v ge = 15 v, i c = 60 a t j = 25 c t j = 125 c --- am11861v1 1e-02 1e-01 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 k t p (s) single pulse d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5
STGW60H65DF test circuits doc id 023011 rev 4 9/13 3 test circuits figure 23. test circuit for inductive load switching figure 24. gate charge test circuit figure 25. switching waveform figure 26. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW60H65DF 10/13 doc id 023011 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
STGW60H65DF package mechanical data doc id 023011 rev 4 11/13 figure 27. to-247 drawing 0075 3 25_g
revision history STGW60H65DF 12/13 doc id 023011 rev 4 5 revision history table 10. document revision history date revision changes 28-mar-2012 1 initial release. 06-jun-2012 2 document status promoted from preliminary data production data. added: section 2.1: electrical characteristics (curves) on page 5 . 26-jul-2012 3 updated: figure 8 on page 6 . 09-jan-2013 4 modified: v f typ. and max. values table 8 on page 4 .
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